Intel and Micron Develop the World’s Fastest NAND Memory

Intel Corporation and Micron Technology Inc. have unveiled a jointly developed high speed NAND flash memory technology that is claimed to be five times faster than conventional NAND.

Delivering “the fastest read and write throughputs ever”, the new NAND flash memory can reach speeds up to 200 megabytes per second (MB/s) for reading data and 100 MB/s for writing data, according to Intel and Micron. In comparison, conventional single level cell NAND is limited to 40 MB/s for reading data and less than 20 MB/s for writing data.

When used in a hybrid hard drive, high speed NAND is claimed to allow the system to read and write data anywhere between two or four times the speed when compared to conventional hard drives.

In addition, with the pending USB 3.0 interface, high speed NAND is expected to effectively deliver on the increased data transfer rates of the new specification, where conventional NAND would act as the bottleneck in system performance, Intel says. USB 3.0 is aiming for 10 times the bandwidth of current USB 2.0 solutions.

“As NAND continues to move into the PC platform, the Non-Volatile Memory Host Controller Interface (NVMHCI) can take advantage of high speed NAND in solutions such as Intel Turbo Memory, allowing for even better system performance,” the press release says.

There is no information on availability of this technology.

Source | Via